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CS3R50FA9 |
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| Part Number | CS3R50FA9 |
| Manufacturer | Huajing Microelectronics |
| Description | VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RD... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:8.5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current ... |
| Document |
 CS3R50FA9 Data Sheet
PDF 241.02KB |
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Desde 2024. D4U Semiconductor.
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