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| Part Number | CS13N50FA9H |
| Manufacturer | Huajing Microelectronics |
| Description | CS13N50F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 500 13 60 0.34 sw... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:45nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °... |
| Document |
 CS13N50FA9H Data Sheet
PDF 345.89KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS13N50FA9D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS13N50FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS13N50A8D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 4 | CS13N50A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 5 | CS13N50A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 6 | CS13-E2GA332MYNS |
TDK |
Disk Ceramic Capacitors |
|
Desde 2024. D4U Semiconductor.
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