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CS2N60A4T |
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| Part Number | CS2N60A4T |
| Manufacturer | Huajing Microelectronics |
| Description | CS2N60 A4T, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche e... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤4.5Ω) l Low Gate Charge (Typical Data:8nC) l Low Reverse transfer capacitances(Typical:1.2pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse A... |
| Document |
 CS2N60A4T Data Sheet
PDF 355.76KB |
Similar Datasheet
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| 1 | CS2N60A4H |
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| 3 | CS2N60A7H |
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| 4 | CS2N60 |
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| 6 | CS2N60F |
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Desde 2024. D4U Semiconductor.
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