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CS3N65A4H-G |
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| Part Number | CS3N65A4H-G |
| Manufacturer | Huajing Microelectronics |
| Description | VDSS 650 V CS3N65 A4H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching R... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤3.5Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 ... |
| Document |
 CS3N65A4H-G Data Sheet
PDF 345.16KB |
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Desde 2024. D4U Semiconductor.
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