CS10N80A8D |
Part Number | CS10N80A8D |
Manufacturer | Huajing Microelectronics |
Description | CS10N80 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 160... |
Features |
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of PC POWER.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS EAR a1 IAR a1 dv/dt a2
PD
VESD(G-S)
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain... |
Document |
CS10N80A8D Data Sheet
PDF 546.82KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CS10N80AND |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS10N80FA9D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS10N50A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS10N50FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS10N60 |
ETC |
VDMOS Transistor | |
6 | CS10N60A8HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |