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CS8N50A8R |
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| Part Number | CS8N50A8R |
| Manufacturer | Huajing Microelectronics |
| Description | CS8N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energ... |
| Features |
l Fast Switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
500 8
100 0.7
l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-S... |
| Document |
 CS8N50A8R Data Sheet
PDF 269.69KB |
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Desde 2024. D4U Semiconductor.
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