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CS50N20ANH |
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| Part Number | CS50N20ANH |
| Manufacturer | Huajing Microelectronics |
| Description | CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche ... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤0.045Ω) l Low Gate Charge (Typical Data:150nC) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 IAS a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Pulsed Avalanche Ratin... |
| Document |
 CS50N20ANH Data Sheet
PDF 417.81KB |
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