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CS3N50B4 |
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| Part Number | CS3N50B4 |
| Manufacturer | Huajing Microelectronics |
| Description | VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching ... |
| Features |
l Fast Switching
l Low ON Resistance(Rdson≤3.0Ω) l Low Gate Charge (Typical Data:9.5nC) l Low Reverse transfer capacitances(Typical:3.8pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current ... |
| Document |
 CS3N50B4 Data Sheet
PDF 230.30KB |
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Desde 2024. D4U Semiconductor.
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