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PTFB212507SH |
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| Part Number | PTFB212507SH |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, hi... |
| Features |
include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB212507SH Package H-37288G-4/2
IMD (dBc) Drain Efficiency (%)
Single-carrier WCDMA, 3GPP Drive-up
VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-15 -20 IMD Low -25 IMD Up -30 Efficiency
45 40 35 30
-35 25
-40 20
-45 15
-50 10
-55 5
-60 0 34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Features
• Broadband internal matching • ... |
| Document |
 PTFB212507SH Data Sheet
PDF 189.71KB |
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Desde 2024. D4U Semiconductor.
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