PTFB183404F |
Part Number | PTFB183404F |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and outp... |
Features |
include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB183404E Package H-36275-8
PTFB183404F Package H-37275-6/2
IMD & ACPR (dBc) Drain Efficiency (%)
Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
-25 35
-30 30
-35 IMD Low
-40 IMD Up
25 20
-45 15
-50
-55
-60 36
ACPR Efficiency
38 40 42 44 46 48 50 Average Output P... |
Document |
PTFB183404F Data Sheet
PDF 590.61KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PTFB183404E |
Infineon |
High Power RF LDMOS Field Effect Transistors | |
2 | PTFB183408SV |
Infineon Technologies |
High Power RF LDMOS Field Effect Transistor | |
3 | PTFB182503EL |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs | |
4 | PTFB182503FL |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs | |
5 | PTFB191501E |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs | |
6 | PTFB191501F |
Infineon Technologies |
Thermally-Enhanced High Power RF LDMOS FETs |