PTFB183404F Infineon High Power RF LDMOS Field Effect Transistors Datasheet. existencias, precio

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PTFB183404F

Infineon
PTFB183404F
PTFB183404F PTFB183404F
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Part Number PTFB183404F
Manufacturer Infineon (https://www.infineon.com/)
Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and outp...
Features include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 30 -35 IMD Low -40 IMD Up 25 20 -45 15 -50 -55 -60 36 ACPR Efficiency 38 40 42 44 46 48 50 Average Output P...

Document Datasheet PTFB183404F Data Sheet
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