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IPG20N10S4L-35 |
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| Part Number | IPG20N10S4L-35 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)... |
| Features |
• Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N10S4L-35 Product Summary V DS R 4) DS(on),max ID 100 V 35 mW 20 A PG-TDSON-8-4 Type IPG20N10S4L-35 Package Marking PG-TDSON-8-4 4N10L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current... |
| Document |
 IPG20N10S4L-35 Data Sheet
PDF 141.56KB |
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Desde 2024. D4U Semiconductor.
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