Busque con el número de pieza junto con el fabricante o la descripción
2SB962-Z |
Click to view a larger image
| Part Number | 2SB962-Z |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= -0.3V(Typ)@IC= -2.0A ·PNP silicon epitaxial transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable op... |
| Features |
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat)NOTE Collector-Emitter Saturation Voltage
VBE(sat)NOTE Base-Emitter Saturation Voltage
IEBO
Emitter Cutoff Current
ICBO
Collector Cutoff Current
hFE1NOTE
DC Current Gain
hFE2NOTE
DC Current Gain
IC= -2.0A; IB= -200mA IC= -2.0A; IB= -200mA VEB= -3V; IC= 0 VCB= -30V; IE= 0 IC= -1A; VCE= -2V IC= -20mA; VCE= -2V
-0.3
-0.5
V
-1.0
-2.0
V
-1.0
μA
-10
μA
60
400
30
fT
Transition frequency
VCE=-5V ,IC=-100mA
80
MHz
Cob
Collector output capacitance
VCB=-10V ,IE=0,f=1MHz
55
pF
NOTE:Pulse test PW≤350us,duty cycle ≤2%
hFE1 ... |
| Document |
 2SB962-Z Data Sheet
PDF 191.45KB |
Desde 2024. D4U Semiconductor.
|