2N6584 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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2N6584

Inchange Semiconductor
2N6584
2N6584 2N6584
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Part Number 2N6584
Manufacturer Inchange Semiconductor
Description ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Current Capability ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A ·Minimum ...
Features LECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 MIN TYP 450 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1.0A ICEO Collector Cutoff Current VCE= 450V; IB= 0 ICBO Collector Cutoff Current VCB= 550V ; IE= 0 IEBO Emitter Cutoff Current VEB= 9V; IC=0 hFE-1 DC Current Gain IC= 5A ; VCE= 3V 7 hFE-2 DC Current Gain IC= 10A ; VCE= 3V 5 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 25 COB Out...

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