2N6584 |
Part Number | 2N6584 |
Manufacturer | Inchange Semiconductor |
Description | ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Current Capability ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A ·Minimum ... |
Features |
LECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO L
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
MIN TYP 450
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.0A
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 1.0A
ICEO
Collector Cutoff Current
VCE= 450V; IB= 0
ICBO
Collector Cutoff Current
VCB= 550V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 9V; IC=0
hFE-1
DC Current Gain
IC= 5A ; VCE= 3V
7
hFE-2
DC Current Gain
IC= 10A ; VCE= 3V
5
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
25
COB
Out... |
Document |
2N6584 Data Sheet
PDF 187.98KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N6580 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | 2N6581 |
Seme LAB |
Bipolar NPN Device | |
3 | 2N6581 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | 2N6582 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | 2N6583 |
Seme LAB |
Bipolar NPN Device | |
6 | 2N6583 |
Inchange Semiconductor |
Silicon NPN Power Transistor |