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2SC3992 |
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| Part Number | 2SC3992 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflecti... |
| Features |
e
IC= 1mA; RBE = ∞
1100
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
800
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=1.2A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=1.2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 0.8A; VCE= 5V
10
60
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
8
Ton
On Time
tstg
Storage Time
tf
Fall Time
VCC=400V,5IB1=-2.5IB2=IC=8A, RL=50Ω
0.5 μs 3.0 μs 0.3 ... |
| Document |
 2SC3992 Data Sheet
PDF 212.57KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3990 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 2 | 2SC3990 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 3 | 2SC3991 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 4 | 2SC3991 |
Inchange Semiconductor |
Silicon NPM Power Transistor |
|
| 5 | 2SC3992 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 6 | 2SC3993 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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