2SC3640 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SC3640

Inchange Semiconductor
2SC3640
2SC3640 2SC3640
zoom Click to view a larger image
Part Number 2SC3640
Manufacturer Inchange Semiconductor
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Speed ·High reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable opera...
Features r-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 1200V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE-1 DC Current Gain IC= 1.2A ; VCE= 5V 2SC3640 MIN TYP. MAX UNIT 800 V 1200 V 5 V 1.5 V 100 μA 1 mA 8 Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our produc...

Document Datasheet 2SC3640 Data Sheet
PDF 198.62KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC3642
Sanyo Semicon Device
NPN Triple Diffused Planar Silicon Transistor Datasheet
2 2SC3642
INCHANGE
NPN Transistor Datasheet
3 2SC3643
Sanyo Semicon Device
NPN Triple Diffused Planar Silicon Transistor Datasheet
4 2SC3644
Sanyo Semicon Device
NPN Triple Diffused Planar Silicon Transistor Datasheet
5 2SC3645
Sanyo Semicon Device
PNP/NPN Epitaxial Planar Silicon Transistors Datasheet
6 2SC3645
Kexin
Transistor Datasheet
More datasheet from Inchange Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad