2SC3640 |
Part Number | 2SC3640 |
Manufacturer | Inchange Semiconductor |
Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Speed ·High reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable opera... |
Features |
r-Base Breakdown Voltage
IC= 1mA ; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 1200V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE-1 DC Current Gain
IC= 1.2A ; VCE= 5V
2SC3640
MIN TYP. MAX UNIT
800
V
1200
V
5
V
1.5
V
100 μA
1
mA
8
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our produc... |
Document |
2SC3640 Data Sheet
PDF 198.62KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3642 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
2 | 2SC3642 |
INCHANGE |
NPN Transistor | |
3 | 2SC3643 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
4 | 2SC3644 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
5 | 2SC3645 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
6 | 2SC3645 |
Kexin |
Transistor |