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2SC1815 |
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| Part Number | 2SC1815 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Voltage and High Current Vceo=50V(Min.），Ic=150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SA1015(O,Y,GR class) ·Minimum Lot-to-Lot variations for robust device performance a... |
| Features |
Voltage IC= 100mA ; IB= 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 100mA ; IB= 10mA
ICBO
Emitter Cutoff Current
VCB= 60V; IE= 0
IEBO
Collector Cutoff Current
VEB= 5V; IC= 0
hFE(1)
DC Current Gain
IC= 2mA ; VCE= 6V
hFE(2)
DC Current Gain
IC= 150mA ; VCE= 6V
fT
Current-Gain—Bandwidth Product
IC= 1mA; VCE= 10V;
Cob
Collector Output Capacitance
VCB=10V; IE=0; f=1MHz
Rbb' Base Intrinsic Resistance
NF
Noise Figure
VCE=10V,IE=-1mA;f=30MHz
VCE=6V,IC=0.1mA;f=1KHz, RG=10KΩ
hFE(1) Classifications O Y GR BL 70-140 120-400 200-400 350-700 MIN TYP. MAX UNIT 0.25 V 1... |
| Document |
 2SC1815 Data Sheet
PDF 175.45KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1810 |
ETC |
NPN Transistor |
|
| 2 | 2SC1812 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 3 | 2SC1815 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC1815 |
UTC |
NPN SILICON TRANSISTOR |
|
| 5 | 2SC1815 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|
| 6 | 2SC1815 |
JCET |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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