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BD684 |
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| Part Number | BD684 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -120V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD683 ·Minimum Lot-to-Lot variations for robust device performance and reli... |
| Features |
ISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -6mA
VBE(on) Base-Emitter On Voltage
IC= -1.5A; VCE= -3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= -60V; IB= 0
VCB= -120V; IE= 0 VCB= -120V; IE= 0;TC= 100℃
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -1.5 A ; VCE= -3V
BD684
MIN MAX UNIT
-120
V
-2.5
V
-2.5
V
-0.5
mA
-0.2 -2.0
mA
-5.0
mA
750
NOTICE： ISC reserves the rights to ma... |
| Document |
 BD684 Data Sheet
PDF 189.89KB |
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Desde 2024. D4U Semiconductor.
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