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2SD1509 |
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| Part Number | 2SD1509 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC=1A ·Minimum Lot-to-... |
| Features |
tance,Junction to Ambient 62.5 ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage IC= 1A, IB= 1mA
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A, IB= 1mA
ICBO
Collector Cutoff Current
VCB= 80V, IE= 0
IEBO
Emitter Cutoff Current
VEB=8V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 2V
2SD1509
MIN TYP. MAX UNIT
80
... |
| Document |
 2SD1509 Data Sheet
PDF 211.85KB |
Similar Datasheet
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