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2SD1245 |
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| Part Number | 2SD1245 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... |
| Features |
Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 60mA
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
hFE
DC Current Gain
IC= 2A; VCE= 2V
2SD1245
MIN TYP. MAX UNIT
400
V
5
V
1.5
V
2.5
V
100 μA
1
mA
500
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. I... |
| Document |
 2SD1245 Data Sheet
PDF 208.64KB |
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