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KTD2061 |
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| Part Number | KTD2061 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA) ·Complement to Type KTB1369 ·Minimum Lot-to-Lot variatio... |
| Features |
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.4A; VCE= 10V
fT
Current-Gain—Bandwidth Product
IC= 0.4A; VCE= 10V
hFE Classification O Y 70-140 120-240 KTD2061 MIN TYP. MAX UNIT 180 V 1.0 V 1.0 V 1.0 μA 1.0 μA 70 240 100 MHz NOTICE： ISC reserves the rights to make changes of the content... |
| Document |
 KTD2061 Data Sheet
PDF 217.52KB |
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Desde 2024. D4U Semiconductor.
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