KTD2060 |
Part Number | KTD2060 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A) ·Complement to ... |
Features |
ollector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)EBO Emitter –Base Breakdown Voltage IE= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V hFE-1 Classifications R O Y 40-80 70-140 120-240 MIN TYP. MAX UNIT 80 V 5 V ... |
Document |
KTD2060 Data Sheet
PDF 214.46KB |
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