KTB1369 |
Part Number | KTB1369 |
Manufacturer | Inchange Semiconductor |
Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type KTD2061 ·Minimum Lot-to-Lot vari... |
Features |
specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -0.4A; VCE= -10V
fT
Current-Gain—Bandwidth Product
IC= -0.4A; VCE= -10V
hFE Classification O Y 70-140 120-240 KTB1369 MIN TYP. MAX UNIT -180 V -1.0 V -1.0 V -1.0 μA -1.0 μA 70 240 100 MHz NOTICE: ISC reserves the rights to mak... |
Document |
KTB1369 Data Sheet
PDF 215.26KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | KTB1366 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
2 | KTB1366 |
JCET |
PNP Transistor | |
3 | KTB1366 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
4 | KTB1366 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR | |
5 | KTB1367 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
6 | KTB1367 |
KEC |
TRIPLE DIFFUSED PNP TRANSISTOR |