Busque con el número de pieza junto con el fabricante o la descripción
MJD253 |
Click to view a larger image
| Part Number | MJD253 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust devi... |
| Features |
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
MJD253
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
-100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA
-0.3
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A
-0.6
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A ;IB= -0.2A
-1.8
V
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter... |
| Document |
 MJD253 Data Sheet
PDF 243.96KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD253 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 2 | MJD253 |
ON |
Complementary Silicon Plastic Power Transistor |
|
| 3 | MJD20 |
Sanken |
P-channel power MOSFET |
|
| 4 | MJD200 |
INCHANGE |
NPN Transistor |
|
| 5 | MJD200 |
ON |
Complementary Plastic Power Transistors |
|
| 6 | MJD200 |
Fairchild |
D-PAK |
|
Desde 2024. D4U Semiconductor.
|