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FQP33N10 |
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| Part Number | FQP33N10 |
| Manufacturer | Inchange Semiconductor |
| Description | INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQP33N10 ·FEATURES ·Low RDS(on) ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·... |
| Features |
·Low RDS(on) ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements ·DESCRITION ·Designed especially for low voltage applications such as Audio amplifier,high efficiency switching DC/DC converters, and DC motor control. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 33 A IDM Drain Current-Single Plused 132 A PD Total Dissipation @TC=25℃ 127 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTE... |
| Document |
 FQP33N10 Data Sheet
PDF 160.82KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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