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C3M0065090D |
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| Part Number | C3M0065090D |
| Manufacturer | Cree |
| Description | VDS 900 V C3M0065090D ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement Mode Features Package • C3M SiC MOSFET technology • H... |
| Features |
Package
• C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies Part Number C3M0065090D Package TO-247-3 Marking C3M0065090 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Par... |
| Document |
 C3M0065090D Data Sheet
PDF 742.68KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | C3M0065090D |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 2 | C3M0065090J |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 3 | C3M0065090J |
Cree |
Silicon Carbide Power MOSFET |
|
| 4 | C3M0065100J |
CREE |
Silicon Carbide Power MOSFET |
|
| 5 | C3M0065100J |
Wolfspeed |
Silicon Carbide Power MOSFET |
|
| 6 | C3M0065100K |
Cree |
Silicon Carbide Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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