MSN0360D |
Part Number | MSN0360D |
Manufacturer | MORESEMI |
Description | MSN0360D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche ... |
Features |
● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply PIN Configuration Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0360D MSN03... |
Document |
MSN0360D Data Sheet
PDF 1.27MB |
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