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AP2334GN |
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| Part Number | AP2334GN |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23S package is widely preferred ... |
| Features |
150 -55 to 150
V A A A W ℃ ℃
Thermal Data
Symbol Rthj-a
Parameter Maximum Thermal Resistance Junction-ambient3
Data and specifications subject to change without notice
Value 100
Unit ℃/W
1 201411282AP
AP2334GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS RDS(ON)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total G... |
| Document |
 AP2334GN Data Sheet
PDF 59.05KB |
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Desde 2024. D4U Semiconductor.
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