AP30G40AEO |
Part Number | AP30G40AEO |
Manufacturer | Advanced Power Electronics |
Description | Advanced Power Electronics Corp. AP30G40AEO Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=130A @VGE=3.3V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halo... |
Features |
00V
-7
Qgc Gate-Collector Charge
VGE=4V
- 18
td(on)
Turn-on Delay Time
VCC=320V
- 200
tr td(off)
Rise Time Turn-off Delay Time
IC=130A RG=10Ω
- 1.3 - 600
tf Fall Time
VGE=3.3V
- 1.4
Cies Input Capacitance
VGE=0V
- 4000
Coes Output Capacitance
VCE=30V
- 30
Cres RthJA1
Reverse Transfer Capacitance f=1.0MHz Thermal Resistance Junction-Ambient
- 20 --
Units V V A W oC oC
Max. Units +30 uA 10 uA
6V 1.2 V 91.2 nC
- nC - nC - ns - us - ns - us - pF - pF - pF 125 oC/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
Data and specifications subject to change w... |
Document |
AP30G40AEO Data Sheet
PDF 57.14KB |
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