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STN4946 |
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| Part Number | STN4946 |
| Manufacturer | Stanson Technology |
| Description | The STN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored... |
| Features |
ameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VGSS ID IDM IS PD TJ
Storgae Temperature Range Thermal Resistance-Junction to Ambient
TSTG RθJA
Typical
60
±20 8.0 6.0 30
11 2.5 1.6 -55/150
-55/150
80
Unit V V A A A W ℃ ℃ ℃/W
2
120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4946 2009. V1
STN4946
Dual N Channel Enhancement Mode MOSFET
1... |
| Document |
 STN4946 Data Sheet
PDF 413.62KB |
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