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STN4416 |
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| Part Number | STN4416 |
| Manufacturer | Stanson Technology |
| Description | STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
| Features |
e noted )
Parameter
Symbol Typical
Drain-Source Voltage
VDSS
20
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
VGSS ID
IDM
±12
1.0 7.2
35
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
2.3
2.5 1.6
150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
80
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4416 2009. V1
STN4416
N Ch... |
| Document |
 STN4416 Data Sheet
PDF 960.21KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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