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STN4110 |
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| Part Number | STN4110 |
| Manufacturer | Stanson Technology |
| Description | STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies... |
| Features |
Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
60
±20 40.0 40.0 180
46 63 31 175
-55/175
16
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STN4110 2010. V1
STN4110
N Channel Enhancement Mode MOSFET
40.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage ... |
| Document |
 STN4110 Data Sheet
PDF 869.43KB |
Similar Datasheet
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