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STN410D |
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| Part Number | STN410D |
| Manufacturer | Stanson Technology |
| Description | STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the ... |
| Features |
e noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
30
±12 15.0 10.0 30
12 25 12.5 150
-55/150
60
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN410D 2009. V1
STN410D
N Channel... |
| Document |
 STN410D Data Sheet
PDF 489.19KB |
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