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STN3456 |
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| Part Number | STN3456 |
| Manufacturer | Stanson Technology |
| Description | The STN3456 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minim... |
| Features |
CHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com
STN3456 2008. V1
STN3456
N Channel Enhancement Mode MOSFET
6.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
Parameter
Symbol
Typical
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
VGSS
±20
Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃
Pulsed Drain Current
ID IDM
6.0 5.0 30
Continuous Source Current (Diode Conduction)
IS
1.7
Power Dissipation Operation Junction Temperature
TA=25℃ TA=70℃
PD TJ
2.0 1.3 150
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junc... |
| Document |
 STN3456 Data Sheet
PDF 398.03KB |
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