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STN1012 |
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| Part Number | STN1012 |
| Manufacturer | Stanson Technology |
| Description | STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-s... |
| Features |
09. V1
STN1012
Dual N Channel Enhancement Mode MOSFET
0.65A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
Gate-Source Voltage
TA=25℃ Continuous Drain Current (TJ=150℃)
TA=80℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
Storage Temperature Range
VDSS VGSS
ID IDM IS PD
TJ TSTG
20 +/-12 0.65 0.45
1.0 0.3 0.27 0.16 -55/150 -55/150
V V
A A A W
℃ ℃
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansont... |
| Document |
 STN1012 Data Sheet
PDF 278.98KB |
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Desde 2024. D4U Semiconductor.
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