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AP30G100W |
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| Part Number | AP30G100W |
| Manufacturer | Advanced Power Electronics |
| Description | Advanced Power Electronics Corp. AP30G100W RoHS-compliant Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High speed switching ▼ Low Saturation Voltage VCE(sat)=3.0V@IC=30A ▼ Industr... |
| Features |
▼ High speed switching ▼ Low Saturation Voltage
VCE(sat)=3.0V@IC=30A ▼ Industry Standard TO-3P Package ▼ RoHS Compliant
G C E
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL
Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction... |
| Document |
 AP30G100W Data Sheet
PDF 210.59KB |
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Desde 2024. D4U Semiconductor.
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