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IXTP6N50P |
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| Part Number | IXTP6N50P |
| Manufacturer | IXYS |
| Description | PolarHVTM Power MOSFET IXTA 6N50P IXTP 6N50P N-Channel Enhancement Mode Avalanche Rated VDSS = 500 ID25 = 6 RDS(on) ≤ 1.1 V A Ω Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tst... |
| Features |
l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount l Space savings l High power density
© 2006 IXYS All rights reserved
DS99447E(04/06)
Symbol
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
IXTA 6N50P IXTP 6N50P
Test Conditions
Characteristic Values (TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
VDS= 20 V; ID = 0.5 ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
3.5 5.5
740 85 8
S
pF pF pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 18 Ω (Ext... |
| Document |
 IXTP6N50P Data Sheet
PDF 221.04KB |
Similar Datasheet
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|---|---|---|---|---|
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Desde 2024. D4U Semiconductor.
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