MSC49N02X |
Part Number | MSC49N02X |
Manufacturer | Bruckewell |
Description | These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superio... |
Features |
• 40V,140A, RDS(ON) =2.2mΩ@VGS = 10V • Improved dv/dt capability • Fast switching • Green Device Available • RoHS compliant package Applications • PowerTools • Load Switch • LED applications • Motor Drive Applications PPAK5X6 Pin Configuration Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current - Continuous (TC=25°C) (Chip Limitation) Drain Current - Continuous (TC=100°C) (Chip Limitation) Drain Current - Pulsed1 Single Pulse Ava... |
Document |
MSC49N02X Data Sheet
PDF 453.49KB |
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