MTB080P06J3 |
Part Number | MTB080P06J3 |
Manufacturer | Cystech Electonics |
Description | CYStech Electronics Corp. Spec. No. : C069J3 Issued Date : 2016.03.16 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTB080P06J3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ... |
Features |
• Low Gate Charge • Simple Drive Requirement • Pb-free Lead Plating & Halogen-free Package Equivalent Circuit MTB080P06J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB080P06J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB080P06J3 CYStek Product Specification CYStech Electronics ... |
Document |
MTB080P06J3 Data Sheet
PDF 442.91KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MTB080P06L3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
2 | MTB080P06M3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
3 | MTB080P06N3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
4 | MTB080P06N6 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
5 | MTB080P06Q8 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
6 | MTB080C10Q8 |
Cystech Electonics |
N- and P-channel enhancement mode power MOSFET |