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2021 |
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| Part Number | 2021 |
| Manufacturer | Tuofeng Semiconductor |
| Description | The 2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC ... |
| Features |
z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-323
Applications
z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift z
SOT-323
D 3
12 GS
Pin configuration (Top view)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2021
Absolute Maximum ratings
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
TA =25°C
Symbol VDS VGS
ID
10 S
Steady State 20 ±6
0.58 0.55
Unit V
A
Maximum Power Dissipation
Pulsed Drain Current c Operating Junction Temperature Lead ... |
| Document |
 2021 Data Sheet
PDF 195.80KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 20200 |
Feihonltd |
Transistor |
|
| 2 | 2021-1G |
MicroElectronics |
LED BACKLIGHT |
|
| 3 | 2021-25 |
GHz TECHNOLOGY |
Microwave |
|
| 4 | 2025-6001-06 |
MACOM |
Directional Couplers |
|
| 5 | 2025-6002-10 |
MACOM |
Directional Couplers |
|
| 6 | 2025-6003-16 |
MACOM |
Directional Couplers |
|
Desde 2024. D4U Semiconductor.
|