SSS8N60 |
Part Number | SSS8N60 |
Manufacturer | Tuofeng Semiconductor |
Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS8N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson(@Vgs=10V) 1.2 Ω Qg 54 nC Package z z z UPS APPLICATIONS z High ... |
Features |
zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
F
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
ABSOLUTE RATINGS (Tc=25℃)
SSS8N60
Parameter
- Drain-Source Voltage
Symbol
VDSS
Value JCS8N60S/B/C JCS8N60F
600 600
Unit
V
Drain Current -continuous
ID T=25℃
7.5
7.5* A
( 1)
Drain Current - pulse
(note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
( 1) Avalanche Current(note 1)
IAR
( 1) Repetitive Avalanche Current(note 1)
EAR
( 3) Peak Diode Recovery ... |
Document |
SSS8N60 Data Sheet
PDF 575.92KB |
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