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IXTR210P10T |
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| Part Number | IXTR210P10T |
| Manufacturer | IXYS |
| Description | Preliminary Technical Information TrenchPTM Power MOSFET IXTR210P10T VDSS = ID25 = ≤RDS(on) -100V -195A 8mΩ P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432... |
| Features |
z Silicon Chip on Direct-Copper Bond (DCB) Substrate
z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Rectifier z Low RDS(ON) and QG
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z Battery Charger Applications
© 2013 IXYS CORPORATION, All Rights Reserved
DS100398A(01/13)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = -10V, ID = - 60A, Note 1
Ciss Coss Crss
VGS = 0V... |
| Document |
 IXTR210P10T Data Sheet
PDF 192.53KB |
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Desde 2024. D4U Semiconductor.
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