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IXTR16P60P |
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| Part Number | IXTR16P60P |
| Manufacturer | IXYS |
| Description | Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR16P60P VDSS = ID25 = ≤RDS(on) - 600V - 10A 790mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR... |
| Features |
z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation
z Avalanche rated z The rugged PolarPTM process z Low QG z Low Drain-to-Tab capacitance z Low package inductance
- easy to drive and to protect
Applications
z High side switching z Push-pull amplifiers z DC Choppers z Automatic test equipment z Load-Switch Application z Fuel Injection Systems
© 2008 IXYS CORPORATION, All rights reserved
DS99989(5/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs VDS = -10V, ID = - 8A, Note 1
Ciss Coss... |
| Document |
 IXTR16P60P Data Sheet
PDF 118.45KB |
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Desde 2024. D4U Semiconductor.
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