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KSD5012 |
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| Part Number | KSD5012 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATIN... |
| Features |
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE DC Current Gain
IC= 1A ; VCE= 5V
fT Current-Gain—Bandwidth Product
VECF
C-E Diode Forward Voltage
tf Fall Time
IC= 1A; VCE= 10V
IF= 5A
IC= 4A , IB1= 0.8A ; IB2= -1.6A RL= 50Ω; VCC= 200V
MIN TYP. MAX UNIT 5.0 V 1.5 V 10 μA
40 130 mA 8
3 MHz 2.0 V 0.4 μs
isc website：www.iscsemi.cn
2
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| Document |
 KSD5012 Data Sheet
PDF 131.63KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KSD5010 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | KSD5011 |
Samsung semiconductor |
NPN Transistor |
|
| 3 | KSD5011 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | KSD5013 |
Samsung semiconductor |
NPN Transistor |
|
| 5 | KSD5013 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | KSD5014 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
Desde 2024. D4U Semiconductor.
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