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KSD5007 Inchange Semiconductor Silicon NPN Power Transistor Datasheet


Inchange Semiconductor
KSD5007
Part Number KSD5007
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V ...
Features VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V tf Fall Time IC= 5A , IB1= 1A ; IB2= -2A RL= 40Ω; VCC= 200V MIN TYP. MAX UNIT 5.0 V 1.5 V 10 μA 1 mA 8 3 MHz 0.4 μs isc website:www.iscsemi.cn 2 ...

Document Datasheet KSD5007 datasheet pdf (122.76KB)




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