KSD5007 |
Part Number | KSD5007 |
Manufacturer | Inchange Semiconductor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR... |
Features |
VCB= 800V ; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V ; IC= 0
hFE DC Current Gain
IC= 1A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
tf Fall Time
IC= 5A , IB1= 1A ; IB2= -2A RL= 40Ω; VCC= 200V
MIN TYP. MAX UNIT 5.0 V 1.5 V 10 μA 1 mA
8 3 MHz 0.4 μs
isc website:www.iscsemi.cn
2
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Document |
KSD5007 Data Sheet
PDF 122.76KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | KSD5000 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | KSD5001 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | KSD5001 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor | |
4 | KSD5002 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
5 | KSD5003 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
6 | KSD5003 |
Samsung semiconductor |
NPN Triple Diffused Planar Silicon Transistor |