HD830 JINGJIAZHEN 500V N-Channel MOSFET Datasheet. existencias, precio

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HD830

JINGJIAZHEN
HD830
HD830 HD830
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Part Number HD830
Manufacturer JINGJIAZHEN
Description HD830_HU830 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Res...
Features = 4.5 A, RG = 25 Ω (Note 4,5) VDS = 400V, ID = 4.5 A, VGS = 10 V (Note 4,5) -------- Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 4.5 A, VGS = 0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IS = 4.5 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) ------ Typ Max Units -- 4.5 1.2 1.5 V Ω -- -- V 0.5 -- V/℃ -- 1 ㎂ -- 10 ㎂ -- 100 ㎁ -- -100 ㎁ 750 86 11.5 840 111 15 ㎊ ㎊ ㎊ 12 46 50 48 15.5 2.9 6.4 35 100 120 105 20 --- ㎱ ㎱ ㎱ ㎱ nC nC...

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