HD830 |
Part Number | HD830 |
Manufacturer | JINGJIAZHEN |
Description | HD830_HU830 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Res... |
Features |
= 4.5 A, RG = 25 Ω
(Note 4,5)
VDS = 400V, ID = 4.5 A, VGS = 10 V
(Note 4,5)
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 4.5 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 4.5 A, VGS = 0 V diF/dt = 100 A/μs (Note 4)
------
Typ Max Units
-- 4.5 1.2 1.5
V Ω
-- -- V 0.5 -- V/℃ -- 1 ㎂ -- 10 ㎂ -- 100 ㎁
-- -100 ㎁
750 86 11.5
840 111 15
㎊ ㎊ ㎊
12 46 50 48 15.5 2.9 6.4
35 100 120 105 20
---
㎱ ㎱ ㎱ ㎱ nC nC... |
Document |
HD830 Data Sheet
PDF 1.77MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | HD8.2Mxx |
NTE Electronics |
(HD Series) HIGH-FREQ ALUMINUM ELECTROLYTIC | |
2 | HD8007 |
HAB Semiconductors |
80C51-based microcontroller | |
3 | HD814253FB |
Hirotech |
Multi2 | |
4 | HD8178232 |
ETC |
Digital Signal Processor | |
5 | HD81803 |
Hitachi Semiconductor |
ADPCM TRANSCODER | |
6 | HD8205 |
HI-DEVICE |
Dual N-Channel MOSFET |