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IRF351 |
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| Part Number | IRF351 |
| Manufacturer | Inchange Semiconductor |
| Description | ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applic... |
| Features |
E Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF351
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 8.0A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 350V; VGS= 0 VSD Diode Forward Voltage IF= 15A; VGS= 0 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.0MHz MIN TYP MAX... |
| Document |
 IRF351 Data Sheet
PDF 42.95KB |
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Desde 2024. D4U Semiconductor.
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