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CTS05S30 |
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| Part Number | CTS05S30 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Schottky Barrier Diode Silicon Epitaxial CTS05S30 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit CTS05S30 1: Cathode 2: Anode CST2 3. Absolute Maximum Ratings (Note) (Unl... |
| Features |
ncept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Measured with a 10 ms pulse.
Start of commercial production
2013-07
1 2014-04-04 Rev.3.0
CTS05S30
4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage Forward voltage Reverse current Reverse current Total capacitance
Symbol
Test Condition
VF(1) VF(2) IR(1) IR(2)
Ct
IF = 0.1 A (Pulse test) IF = 0.5 A (Pulse test) VR = 10 V (Pulse test) VR ... |
| Document |
 CTS05S30 Data Sheet
PDF 151.37KB |
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