CCS15S40 |
Part Number | CCS15S40 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | Schottky Barrier Diode Silicon Epitaxial CCS15S40 1. Applications • High-Speed Switching 2. Features (1) Small package (2) Low forward voltage: VF(2) = 0.47 V (typ.) 3. Packaging and Internal Circuit ... |
Features |
(1) Small package (2) Low forward voltage: VF(2) = 0.47 V (typ.)
3. Packaging and Internal Circuit
CST2C
CCS15S40
1: Cathode 2: Anode
©2015 Toshiba Corporation
1
Start of commercial production
2014-01
2015-11-13 Rev.3.0
CCS15S40
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
40 V
Average rectified current
IO (Note 1)
1.5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
A
Junction temperature
Tj 125
Storage temperature
Tstg
-55 to 125
Note: Using continuously u... |
Document |
CCS15S40 Data Sheet
PDF 126.25KB |
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