Busque con el número de pieza junto con el fabricante o la descripción
CCS15S30 |
Click to view a larger image
| Part Number | CCS15S30 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit CCS15S30 1: Cath... |
| Features |
(1) Low forward voltage: VF(1) = 0.33 V (typ.)
3. Packaging and Internal Circuit
CCS15S30
1: Cathode 2: Anode
CST2C
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
1.5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
5
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant cha... |
| Document |
 CCS15S30 Data Sheet
PDF 137.13KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CCS15S40 |
Toshiba |
Schottky Barrier Diode |
|
| 2 | CCS-18 |
Teledyne |
Normally Open Coaxial Switch |
|
| 3 | CCS-32 |
Teledyne |
Latching Coaxial Switch |
|
| 4 | CCS020M12CM2 |
Cree |
Silicon Carbide Six-Pack (Three Phase) Module |
|
| 5 | CCS050M12CM2 |
Cree |
All-Silicon Carbide Six-Pack (Three Phase) Module |
|
| 6 | CCS801 |
CMOS Sensors |
Ultra-low power multi-gas sensor |
|
Desde 2024. D4U Semiconductor.
|