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IRF320 |
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| Part Number | IRF320 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID=3.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor drive... |
| Features |
CAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS(TH) Gate Threshold Voltage
VGS=0; ID=250µA VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=1.8A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current
VDS=400V; VGS=0
VSD Diode Forward Voltage
IS=3.0A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
VGS=10V; ID=1.5A; VDD=200V; RL... |
| Document |
 IRF320 Data Sheet
PDF 42.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF320 |
Samsung semiconductor |
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| 2 | IRF320 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 3 | IRF320 |
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| 4 | IRF320 |
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| 5 | IRF3205 |
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N-Channel Trench Process Power MOSFET Transistor |
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| 6 | IRF3205 |
Inchange Semiconductor |
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| 7 | IRF3205 |
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| 8 | IRF3205 |
nELL |
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| 9 | IRF3205A |
nELL |
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| 10 | IRF3205H |
nELL |
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Desde 2024. D4U Semiconductor.
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